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- Samsung 990 Evo 1 TB – Specifications
Samsung 990 Evo 1 TB – Specifications
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Capacity: 1 TB
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Controller: Samsung Piccolo Controller
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Flash: TLC
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Interface: PCIe 4.0 x4
Samsung 990 Evo 1 TB full Specs ,Features
Samsung 990 EVO 1TB is an M.2 NVMe SSD supporting a PCIe 4.0 x4 interface. The drive possesses high sequential read speeds up to 5,000 MB/s and writes up to 4,200 MB/s. Samsung’s V-NAND TLC technology is in use. It has high power efficiency for gaming and various creative works.
Specifications
Genral Info
| Brand Name | Samsung |
| Released | 12 February 2025 |
| Available Capacities | 1 TB |
Interface
| Connection | M.2 2280 |
| Interface | PCIe 4.0 x4 |
| Protocol | NVMe 2.0 |
Controller
| Manufacturer | Samsung |
| Name | Piccolo (S4LY022) |
| Architecture | ARM 32-bit Cortex-R8 |
| Cores | 6 |
| Process | 5 nm |
| Chip Enables | 4 |
| Flash Channels | 4 @ 2,400 MT/s |
SSD NAND Flash
| Manufacturer | Samsung |
| Model | V-NAND V6 Prime |
| Type | TLC |
| Technology | 133-layer |
| Speed | 1200 MT/s |
| Capacity <strong>Battery Capacity</strong> is a measure (typically in Amp-hr) of the charge stored by the battery, and is determined by the mass of active material contained in the battery. The battery capacity represents the maximum amount of energy that can be extracted from the battery under certain conditions. | 2 chips @ 4 Tbit |
| Page Size | 16 KB |
SDD Performance
| Sequential Read Speed | 5,000 MB/s |
| Sequential Write Speed | 4,200 MB/s |
| Random Read IOPS | 680,000 IOPS |
| Random Write IOPS | 800,000 IOPS |
| pSLC-Cache | Yes |
Reliability
| TBW (Total Bytes Written) | 600 TBW |
| Warranty | 5 Years |
| MTBF (Mean Time Between Failures) | 1.5 Million Hours |
| Drive Writes Per Day (DWPD) | 0.3 |
DRAM Cache
| Type | DDR4 |
Feature
| Features |
TRIM PS5 Compatible SMART |
