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- Samsung 990 Evo Plus 1 TB – Specifications
Samsung 990 Evo Plus 1 TB – Specifications
-
Capacity
1 TB -
Controller
Samsung Piccolo -
Flash
TLC -
Interface
PCIe 5.0 x2
Samsung 990 Evo Plus 1 TB full Specs ,Features
Samsung 990 Evo Plus 1TB SSD features PCIe Gen 4.0 x4 interface, sequential read speeds up to 7,250 MB/s, write speeds up to 6,300 MB/s, random read speeds of 850K IOPS, and a 5-year warranty with 600 TBW endurance.
Specifications
Genral Info
| Brand Name | Samsung |
| Released | 12 February 2025 |
| Available Capacities | 1 TB |
Interface
| Connection | M.2 2280 (Single-Sided) |
| Interface | PCIe 5.0 x2 |
| Protocol | NVMe 2.0 |
Controller
| Manufacturer | Samsung |
| Name | Piccolo (S4LY022) |
| Architecture | ARM 32-bit Cortex-R8 |
| Cores | 6 |
| Process | 5 nm |
| Chip Enables | 4 |
| Flash Channels | 4 @ 2,400 MT/s |
SSD NAND Flash
| Manufacturer | Samsung |
| Model | V-NAND V8 |
| Type | TLC |
| Technology | 236-layer |
| Speed | 2400 MT/s |
| Capacity <strong>Battery Capacity</strong> is a measure (typically in Amp-hr) of the charge stored by the battery, and is determined by the mass of active material contained in the battery. The battery capacity represents the maximum amount of energy that can be extracted from the battery under certain conditions. | 1 chip @ 8 Tbit |
| Page Size | 16 KB |
| Block Erase Time (tBERS) | 4.0 ms |
SDD Performance
| Sequential Read Speed | 7,150 MB/s |
| Sequential Write Speed | 6,300 MB/s |
| Random Read IOPS | 850,000 IOPS |
| Random Write IOPS | 1,350,000 IOPS |
| pSLC-Cache | 114 GB |
Reliability
| TBW (Total Bytes Written) | 600 TBW |
| Warranty | 5 Years |
| MTBF (Mean Time Between Failures) | 1.5 Million Hours |
| Drive Writes Per Day (DWPD) | 0.3 |
DRAM Cache
| Type | NA |
Feature
| Features |
AES-256 TCG Opal Security TRIM SMART PS5 Compatible |
